Semiconductor device and manufacturing method therefor

ABSTRACT

A semiconductor device includes a circuit substrate, a first semiconductor chip disposed on the circuit substrate, a plurality of first spacers disposed on the first semiconductor chip, a second semiconductor chip which includes a first adhesive agent layer on a lower face thereof and is disposed on upper portions of the plurality of spacers, a wire which connects the circuit substrate to the first semiconductor chip, and a first sealing material which seals a gap between the first semiconductor chip and the first adhesive agent layer, wherein each height of the plurality of the first spacers is greater than height of the wire relative to an upper face of the first semiconductor chip.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority of theprior Japanese Patent Application No. 2011-170422, filed on Aug. 3,2011, the entire contents of which are incorporated herein by reference.

FIELD

The embodiments discussed herein is related a semiconductor device and amanufacturing method therefor.

BACKGROUND

A semiconductor device is formed by sealing an integrated circuit chip(semiconductor chip) mounted on a package substrate (hereafter simplyreferred to as substrate) with an epoxy resin etc. Normally, the numberof integrated circuit chips included in the semiconductor device is one.

However, in recent years, there has been developed a stacked IC(integrated circuit) having a plurality of integrated circuit chipsmounted on a substrate. The stacked IC is a semiconductor device havingintegrated circuit chips and flat plate-shaped spacers (of mono-crystalsilicon, for example) stacked alternately.

The stacked IC is formed by that adhesive layers disposed on the eachrear face of integrated circuit chips and the spacers are adhered(attached) to members (integrated circuit chips or spacers) on the lowerside. (For example, Japanese Laid-open Patent Publication NO.2009-194189)

SUMMARY

According to an aspect of the embodiments, a semiconductor deviceincludes a circuit substrate, a first semiconductor chip disposed on thecircuit substrate, a plurality of first spacers disposed on the firstsemiconductor chip, a second semiconductor chip which includes a firstadhesive agent layer on a lower face thereof and is disposed on upperportions of the plurality of spacers, a wire which connects the circuitsubstrate to the first semiconductor chip, and a first sealing materialwhich seals a gap between the first semiconductor chip and the firstadhesive agent layer, wherein each height of the plurality of the firstspacers is greater than height of the wire relative to an upper face ofthe first semiconductor chip.

The object and advantages of the invention will be realized and attainedby means of the elements and combinations particularly pointed out inthe claims.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and arenot restrictive of the invention, as claimed.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 illustrates a cross section of a semiconductor device accordingto the embodiment 1;

FIG. 2 illustrates a cross section of a semiconductor device accordingto the embodiment 1;

FIG. 3 is a plan view of an integrated circuit chip included in thesemiconductor device;

FIG. 4 is a side view illustrating one example of a spacer;

FIGS. 5A-5D are process cross sections illustrating a manufacturingmethod of the semiconductor device according to the embodiment 1;

FIGS. 6A-6D are process cross sections illustrating the manufacturingmethod of the semiconductor device according to the embodiment 1;

FIGS. 7A-7B are process cross sections illustrating the manufacturingmethod of the semiconductor device according to the embodiment 1;

FIG. 8 is a cross section illustrating a deformation example accordingto the embodiment 1;

FIG. 9 is a cross section illustrating the deformation example accordingto the embodiment 1;

FIG. 10 is a cross section illustrating another deformation example ofthe embodiment 1;

FIG. 11 is a cross section illustrating the another deformation exampleof the embodiment 1;

FIG. 12 is a cross section of a semiconductor device according to theembodiment 2;

FIG. 13 is a cross section of the semiconductor device according to theembodiment 2;

FIG. 14 is a plan view of a stack member included in the semiconductordevice;

FIG. 15 is a substrate-side plan view of an additional stack member;

FIG. 16 is a cross section illustrating a deformation example of theembodiment 2;

FIG. 17 is a cross section illustrating the deformation example of theembodiment 2;

DESCRIPTION OF EMBODIMENTS

The adhesive layer for use in the stacked IC is an adhesive film (dieattach film or the like), for example. Compatibility between such theadhesive layer and the integrated circuit chip is not excellent ascompared to that between a sealing material (mold resin) and theintegrated circuit chip. Therefore, various problems may occur if theadhesive layer is attached on the surface of the integrated circuitchip.

For example, when the semiconductor device is heated by a reflowprocess, stress is produced because of the difference in thermalexpansion coefficients between the integrated circuit chip and theadhesive layer. At this time, the produced stress is concentrated at thesurface of the integrated circuit chip, because of the difference inelastic coefficients between both members. This may cause broken wiringin the integrated circuit chip. A similar problem may occur in case oflaminating a heat sink etc. on the integrated circuit chip using theadhesive layer.

Also, when the pitch of bonding wires connected to the integratedcircuit chip are narrow, the bonding wires are displaced to contact toeach other easily due to an injection of a resin at the time of molding.

According to the embodiments, it is possible to prevent problems causedby the adhesive layer attached to the surface of the integrated circuitchip.

Embodiment 1

(1) Structure

FIGS. 1 and 2 illustrate cross sections of a semiconductor device 2according to the present embodiment. FIG. 3 is a plan view of anintegrated circuit chip 4 included in the semiconductor device 2. FIG. 1is a cross section of the semiconductor device 2 along a straight line(line I-I depicted in FIG. 3) passing through spacers 12. Also, FIG. 2is a cross section of the semiconductor device 2 along a straight line(line II-II in FIG. 3) passing through IC pad electrodes 24.

As illustrated in FIGS. 1 and 2, the semiconductor device 2 according tothe present embodiment includes the integrated circuit chip 4, a stackmember 6 and a sealing material 8.

On the surface of the integrated circuit chip 4, an integrated circuitsuch as a memory and a logic circuit is formed (the same is applicableto another integrated circuit chip described later). As illustrated inFIG. 1, the integrated circuit chip 4 is mounted on a substrate (packagesubstrate) 10 by a conductive paste 32 at the rear face side of theintegrated circuit chip 4.

Further, as illustrated in FIGS. 1 and 3, the integrated circuit chip 4includes a plurality of spacers 12 directly adhered to the surfacethereof. The all spacers have an identical height. As the adheredpositions of the spacers 12, outer circumference portions (particularly,four corners) of the integrated circuit chip 4 are preferable, asillustrated in FIG. 3.

On a surface on the substrate side of the stack member 6 (hereafterreferred to as lower surface), an adhesive layer (adhesive agent layer)14 is provided. By the adhesive layer 14, the stack member 6 is adheredto the upper portion of the plurality of spacers 12. Thus, the adhesivelayer 14 is separated from the integrated circuit chip 4.

The stack member 6 is a heat sink, for example. The adhesive layer 14 isa thermoplastic resin film of, for example, HIATTCH (product name)manufactured by Hitachi Chemical Co., having a thickness of 10-100 μm.

The sealing material 8 seals (that is, fills) at least between theintegrated circuit chip 4 and the adhesive layer 14. The sealingmaterial 8 is a thermosetting resin (a resin whose main component is anepoxy resin), for example.

FIG. 4 is a side view illustrating one example of a spacer 12. Thespacer 12 includes a first ball (Au ball, for example) 20 directlyadhered to an adhesive pad (Al pad, for example) 18 provided on thesurface of the integrated circuit chip 4 and a second ball (Au ball, forexample) 22 directly adhered onto the first ball 20, as an example.Preferably, the first ball 20, the second ball 22 and the adhesive pad18 are metal.

Here, the spacer 12 is not limited to such two-layered balls asillustrated in FIG. 4. The spacer 12 may be any protrusion (bump spacer)provided on the surface of the integrated circuit chip 4.

The first ball 20 and the second ball 22 are ball-shaped swellingsformed at the tip of a bonding wire (Au wire etc.) by discharge. Byapplying ultrasonic vibration to the swellings while being pressed ontothe adhesive pad 18, the first ball 20 is adhered to the surface of theintegrated circuit chip 4.

When ultrasonic vibration is applied to the first ball 20, an oxide onthe surface of the adhesive pad 18 contacting to the first ball 20 isbroken. As a result, the first ball 20 is directly adhered to theadhesive pad 18 without the adhesive layer (adhesive agent layer) lyingbetween them. Similarly, by applying ultrasonic vibration to the secondball 22 while pressing the second ball 22 onto the first ball 20, thesecond ball 22 is directly adhered to the first ball 20.

As such, in the semiconductor device 2, there is no adhesive layerattached to the surface of the integrated circuit chip 4. Thus,according to the present embodiment, a problem caused by the adhesivelayer attached to the surface of the integrated circuit chip isprevented.

The problem caused by the adhesive layer attached to the surface of theintegrated circuit chip is disconnection of wires on the integratedcircuit chip. As the sealing material 8, a resin having a thermalexpansion coefficient substantially the same as that of the integratedcircuit chip 4 (semiconductor chip) is used. In contrast, the thermalexpansion coefficient of the resin for use in the adhesive layer greatlydiffers from the thermal expansion coefficient of the integrated circuitchip 4.

Now, a semiconductor device having the stack member 6 adhered to theintegrated circuit chip 4 is considered. When such semiconductor deviceis exposed at high temperature, stress is caused by a difference in thethermal expansion coefficients between the integrated circuit chip 4 andthe adhesive layer 14.

The integrated circuit chip 4 and the adhesive layer 14 have greatlydifferent elastic coefficients, not only different thermal expansioncoefficients. By this, the stress caused by the difference of thethermal expansion coefficients is concentrated on an interface betweenthe integrated circuit chip 4 and the adhesive layer 14, and disconnectsthe wiring of the integrated circuit chip 4. Here, one of cases in whichthe semiconductor device is exposed to high temperature is a reflowprocess to mount the semiconductor device on the printed substrate.

Another problem caused by the adhesive layer is so-called a popcornphenomenon. To attach the adhesive layer to the surface of theintegrated circuit chip, first, a stack member having the adhesive layerdisposed on the rear face thereof is mounted on the integrated circuitchip. Thereafter, by pressing the stack member onto the integratedcircuit chip while the adhesive layer is heated, the stack member isattached to the integrated circuit chip.

When mounting the stack member on the integrated circuit chip, a minutegap is produced between the integrated circuit chip and the adhesivelayer. When the adhesive layer is softened by heat, air left in the gapis taken into the adhesive layer, and thereby a void is produced.

Now, in the sealing material of the semiconductor device, a small amountof moisture-absorbable substance is included. With this, the sealingmaterial gradually absorbs moisture in the atmosphere after theintegrated circuit chip is sealed.

When the semiconductor device is heated again for a reflow process etc.,a portion of moisture absorbed in the sealing material is concentratedupon the void in the adhesive layer. As a result, pressure in the voidincreases, and the semiconductor device is exploded by the increasedpressure.

Such problems similarly occur in a semiconductor device like a stackedIC, having spacers adhered to the integrated circuit chip by theadhesive layer.

In contrast, in the semiconductor device 2 according to the presentembodiment, there is no adhesive layer attached to the surface of theintegrated circuit chip 4. Therefore, according to the presentembodiment, it is possible to prevent such problems caused by theadhesive layer attached to the surface of the integrated circuit chip 4.

Now, as illustrated in FIG. 2, IC pad electrodes 24 are provided on thesurface of the integrated circuit chip 4. To each IC pad electrode 24, atip portion of a bonding wire 26 is adhered. The other end of thebonding wire 26 is adhered to a substrate surface-side pad electrode(not illustrated) provided on the surface of the substrate 10.

In addition to the substrate surface-side pad electrode, the substrate10 includes substrate rear face-side pad electrode (not illustrated),via conductor and solder ball 28. The via conductor is a conductorfilled into a via provided at the substrate 10 to connect the substratesurface-side pad electrode to the substrate rear face-side padelectrode. The solder ball 28 is adhered to the substrate rear face-sidepad electrode. Here, solder balls 28 are disposed two dimensionally onthe rear face of the substrate 10.

A signal input into the semiconductor device 2 is transmitted to theintegrated circuit chip 4 through a path connecting each solder ball 28to the bonding wire 26. Also, a signal generated by the integratedcircuit chip 4 is transmitted through the above path. Namely, thesemiconductor device 2 is a BGA (ball grid array) semiconductor device.

As illustrated in FIG. 3, the tip portion 30 of each bonding wire 26 isprocessed into a ball-shaped swelling (hereafter referred to as wireball). The wire ball 30 is adhered (connected) to an IC pad electrode 24(refer to FIG. 2). Further, to an adhesive pad 18 (refer to FIG. 1), afirst metallic ball 20 included in a spacer 12 is adhered.

The size (particularly the size in the direction perpendicular to thesubstrate 10) of the first metallic ball 20 is larger than the size ofthe wire ball 30. The same is applicable to the second metallic ball 22.Therefore, the size (particularly the size in the directionperpendicular to the substrate 10) of the spacer 12 is larger than thewire ball 30. In other words, each height of the plurality of spacers 12is greater than the height of the bonding wire 26 relative to the upperface of the integrated circuit chip 4.

Therefore, as illustrated in FIG. 2, it is difficult for a loop of thebonding wire 26 to contact to the stack member 6. Because of this, inthe semiconductor device 2 according to the present embodiment, a shortcircuit of bonding wires 26 via the stack member 6 (for example, heatsink) hardly occurs.

Further, according to the present embodiment, each portion of thebonding wires 26 (a top of the wire loop and the vicinity thereof) isburied into the adhesive layer 14, as illustrated in FIG. 2. By this, inthe molding process described later, the bonding wires 26 are notdisplaced by the mold resin. Therefore, the bonding wires 26 do notcontact each other. Accordingly, a short circuit between the bondingwires hardly occurs.

If a gap between the bonding wires 26 becomes narrow, a short circuitbetween wires is apt to occur by distortion of the bonding wire 26 whenthe resin is poured. However, because each bonding wire 26 is fixed byburying the upper portion of the bonding wire 26 into the adhesive layer14, a short circuit does not occur between the bonding wires 26.

(2) Manufacturing Method

FIGS. 5A through 7B are process cross sections illustrating amanufacturing method of the semiconductor device 2 according to thepresent embodiment. Hereafter, the manufacturing method of thesemiconductor device 2 will be described according to FIGS. 5A through7B.

(i) Die Bonding Process (FIG. 5A)

First, to the substrate 10 having a conductive paste 32 coated thereon,the integrated circuit chip 4 is adhered by scrubbing. By this, theintegrated circuit chip 4 is adhered to the substrate 10 at the rearface side of the integrated circuit chip 4.

(ii) Spacer Formation Process (FIGS. 5B and 5C)

First, from a capillary (not illustrated) of a wire bonding device, thetip of a bonding wire (Au wire, for example) is ejected. By melting thebonding wire tip by discharge, a first ball 20 is formed.

While the first ball 20 is pressed onto an adhesive pad 18 disposed onthe surface of the integrated circuit chip (refer to FIG. 1), ultrasonicvibration is applied to the first ball 20. By this, an oxide on thesurface of the adhesive pad 18 is broken, so that the first ball 20 isdirectly adhered to the adhesive pad, as illustrated in FIG. 5B. At thistime, the first ball 20 and the adhesive pad 18 are bonded byintermetallic bond.

Next, the tip of the bonding wire extending from the first ball 20 isseparated from the first ball 20 by discharge. By this discharge, a newfirst ball 20 is formed.

According to the aforementioned procedure, a newly formed first ball 20is directly adhered to another adhesive pad 18. By the repetition of theabove operations, the first balls 20 are adhered to all of the adhesivepads 18.

When separating the bonding wire from the finally adhered first ball 20,a new ball is formed at a tip of the bonding wire. The newly formed ballis adhered to the first ball 20 as a second ball 22. By this, asillustrated in FIG. 5C, each spacer 12 is formed. By repeating the aboveoperations, the second balls are adhered to all of the first balls. Bythe above procedure, the plurality of spacers 12 are directly adhered tothe surface of the integrated circuit chip 4.

(iii) Wire Bonding Process (FIG. 5D)

Next, each end of bonding wires is adhered to the IC pad electrode 24(refer to FIG. 2) provided on the surface of the integrated circuit chip4. Further, to the substrate surface-side electrode pad (notillustrated) of the substrate 10, the other end of the bonding wire 26is connected.

(iv) Mounting Process (FIG. 6A)

A stack member 6 having a thermoplastic adhesive layer 14 (for example,an adhesive film) disposed on the substrate side is mounted on thespacers 12 directly adhered to the surface of the integrated circuitchip 4.

(v) Adhesion Process (FIGS. 6B and 6C)

While the adhesive layer 14 is heated, the stack member 6 mounted on thespacers 12 is pressed onto the spacers 12. At this time, for an example,the substrate 10 having the integrated circuit chip 4 disposed thereonand the stack member 6 are heated in an oven etc., together with theadhesive layer 14.

By the above heating, the thermoplastic adhesive layer 14 is softened.In this state, if the stack member 6 is pressed onto the spacers 12, thespacers 12 and the bonding wires 26 are pushed into the adhesive layer14 (FIGS. 6B and 6C).

Here, FIG. 6B illustrates a process cross section along the straightline (line I-I in FIG. 3) passing through the spacers 12. Also, FIG. 6Cillustrates a process cross section along the straight line (line II-IIin FIG. 3) passing through the IC pad electrodes 24.

Thereafter, when the adhesive layer 14 returns to the room temperature,the adhesive layer 14 is cured and the upper portion of each spacer 12and a portion of each bonding wire 26 are buried into the adhesive layer14.

(v) Molding Process (FIG. 7A)

Next, the substrate 10 having the stack member 6 adhered to the spacers12 is mounted on a resin sealing mold (not illustrated). An epoxy resinis injected into the mold, thereafter the injected resin is cured byheating. By this, the integrated circuit chip 4 is sealed by a sealingmaterial 8. Thereafter, the mold is detached.

On injecting the resin into the mold, there is a risk that the bondingwires 26 are displaced by the resin, resulting in contacting to eachother. However, according to the present embodiment, because each top ofthe loops of the bonding wires 26 and the vicinity thereof are buriedinto the adhesive layer 14, the bonding wires 26 do not contact easily.

(vi) Ball Mounting Process and Cutoff Process (FIG. 7B)

After the resin-sealed semiconductor device 2 is detached from the mold,solder balls 28 are loaded on the substrate rear face-side padelectrodes formed on the rear face of the substrate 10. Finally, bycutting off the substrate 10, the semiconductor device 2 is formed intopieces.

(3) Deformation Example

FIGS. 8 and 9 are cross sections illustrating a deformation example 2aaccording to the present embodiment. FIG. 8 is a cross section along astraight line passing through spacers 12. FIG. 9 is a cross sectionalong a straight line passing through IC pad electrodes 24.

As illustrated in FIG. 8, an integrated circuit chip 4 in the presentdeformation example 2a is mounted on a die pad (substrate) 36 of a leadframe 34. Further, as illustrated in FIG. 9, each IC pad electrode 24 ofthe integrated circuit chip 4 is adhered to a lead 38. Other portions inthe deformation example 2a have substantially identical structures tothe semiconductor device 2 illustrated in FIGS. 1 through 3.

FIGS. 10 and 11 are cross sections illustrating another deformationexample 2a of the present embodiment. FIG. 10 is a cross section along astraight line passing through spacers 12. FIG. 11 is a cross sectionalong a straight line passing through IC pad electrodes 24.

In the semiconductor device 2 described by reference to FIGS. 1 through3, the stack member 6 is a heat sink. In contrast, a stack member 6 inthe present deformation example 2b is an integrated circuit chip 4 b.Namely, the semiconductor device in the present deformation example is astacked IC.

As illustrated in FIG. 11, a tip portion of each bonding wire 26 b isadhered to each IC pad electrode 24 b included in the integrated circuitchip 4 b (stack member). To the other end of the bonding wire 26 b, asubstrate surface-side pad electrode (not illustrated) provided on thesurface of a substrate 10 is adhered (connected). Similarly, to IC padelectrodes 24 of an integrated circuit chip 4, other substratesurface-side pad electrodes are adhered (connected) respectively.

To the substrate surface-side pad electrodes, a wiring circuit providedon the substrate 10 is connected. Through the wiring circuit, theintegrated circuit chip 4 in the first layer is connected to theintegrated circuit chip 4 b (stack member) in the second layer. Also,each substrate rear face-side pad electrode having a solder ball 28adhered thereto is connected to the above wiring circuit.

Different from the semiconductor device 2 illustrated in FIGS. 1 and 2,in the present deformation example 2b, the overall stack member 6(integrated circuit chip 4 b) is sealed by a sealing material 8. Thisaims to protect the stack member 6 (integrated circuit chip 4 b). Otherportions of the present deformation example 2b include substantiallyidentical structures to the semiconductor device 2 illustrated in FIGS.1 and 2.

Embodiment 2

FIGS. 12 and 13 are cross sections of a semiconductor device 40according to the present embodiment. FIG. 14 is a plan view of a stackmember 6 included in the semiconductor device 40. Hereafter, thesemiconductor device 40 of the present embodiment will be describedaccording to FIGS. 12 through 14. The description of portions common tothe embodiment 1 will be omitted.

(1) Structure

FIG. 12 is a cross section along a straight line passing through spacers12. FIG. 13 is a cross section along a straight line passing through ICpad electrodes 24.

The semiconductor device 40 according to the present embodiment is asemiconductor device further including an additional stack member 42 inthe semiconductor device 2 b (stacked IC) described by reference toFIGS. 10 and 11. Here, the additional stack member 42 is an integratedcircuit chip 4 c.

As described by reference to FIGS. 10 and 11, a stack member 6 is anintegrated circuit chip 4B. As illustrated in FIG. 12, the integratedcircuit chip (stack member) 4B includes a plurality of additionalspacers 44 directly adhered to a face (hereafter referred to as upperface) of the integrated circuit chip (stack member) 4B on the oppositeside to the substrate 10.

Also, the additional stack member 42 includes an additional adhesivelayer (adhesive agent layer) 46 provided on a substrate-side face(hereafter referred to as lower face) of the additional stack member 42.The additional adhesive layer 46 is composed of a thermoplastic resinfilm, for example.

As illustrated in FIG. 12, the additional adhesive layer 46 is adheredto the upper portions of a plurality of additional spacers 44.Therefore, additional adhesive layer 46 is separated from the integratedcircuit chip 4B (stack member 6).

As illustrated in FIGS. 12 and 13, a sealing material 8 seals (in otherwords, fills up) a gap between the integrated circuit chip 4 and theadhesive layer 14, and also seals (fills up) a gap between theintegrated circuit chip 4B (stack member) and the additional adhesivelayer 46. Further, as illustrated in FIG. 13, a portion of each bondingwire 26B adhered to the upper face of the integrated circuit chip 4B(stack member) is buried into the additional adhesive layer 46.

Thus, according to the semiconductor device 40 of the presentembodiment, it is possible to prevent problems caused by the additionaladhesive layer 46 (such as wire disconnection on the integrated circuitchip 4B) and displacement of bonding wires 26B.

FIG. 14 illustrates the upper face of the integrated circuit chip 4B(stack member). As illustrated in FIG. 14, the above-mentionedadditional spacers 44 are disposed at the four corners of the integratedcircuit chip 4B. Also, on the outer circumference portion of theintegrated circuit chip 4B, the tip portions of the bonding wires 26Bare adhered (connected). Further, on the central portion of theintegrated circuit chip 4B, a plurality of array IC pad electrodes 50arrayed in a two dimensional manner are provided.

FIG. 15 is a substrate-side plan view of the additional stack member 42.The additional stack member 42 according to the present embodiment is anintegrated circuit chip 4 c that is reversed in the vertical direction.In other words, the surface of the integrated circuit chip 4 c faces thesurface of the integrated circuit chip 4B (stack member 6).

In FIG. 14, projection lines obtained by projecting the contour of theintegrated circuit chip 4 c (additional stack member 42) to theintegrated circuit chip 4B (stack member 6) are illustrated with dottedlines.

As illustrated in FIG. 15, an additional adhesive layer 46 is providedon the outer circumference portion of the integrated circuit chip 4 c(additional stack member 42). By the above additional adhesive layer 46,the integrated circuit chip 4 c (additional stack member 42) is adheredto the additional spacers 44. In FIG. 15, the adhesion positions of theadditional spacers 44 are depicted with broken lines.

Inside the additional adhesive layer 46, there are provided solder bumps52 to be adhered to the array IC pad electrodes 50 of the integratedcircuit chip 4B (stack member 6). Through the above solder bumps 52, theintegrated circuit chip 4B (stack member 6) and the integrated circuitchip 4 c (additional stack member 42) interchange signals.

(2) Manufacturing Method

To manufacture the semiconductor device 40, first of all, the processesup to the adhesion process (FIGS. 6B and 6C) described in the embodiment1 are performed. In this case, the stack member 6 is the integratedcircuit chip 4B.

Thereafter, each IC pad electrode 24B (refer to FIG. 13) of theintegrated circuit chip 4B is connected to one of the substratesurface-side pad electrodes with a bonding wire 26B. Further, eachadditional spacer 44 is adhered to one of the adhesive pads 18B (referto FIG. 12) of the integrated circuit chip 4B.

Then, the integrated circuit chip 4 c (additional stack member 42) ismounted on the additional spacers 44. Next, while heating the additionaladhesive layer 46 and the solder bumps 52, the integrated circuit chip 4c (additional stack member 42) is pressed onto the additional spacers44.

By this, the integrated circuit chip 4 c (additional stack member 42) isadhered (connected) to the integrated circuit chip 4B (stack member 6).Thereafter, the molding process, the boll mounting process and thecutoff process described in the embodiment 1 are carried out. Throughthe above processes, the semiconductor device 40 of the presentembodiment is formed.

Now, the structure of each additional spacer 44 is substantiallyidentical to the structure of each spacer 12 described by reference toFIG. 4. It may also be possible to use a ball stack structure havingsubstantially identical structure to the additional spacer 44, in placeof the solder bump 52.

FIGS. 16 and 17 are cross sections illustrating a deformation example 40a of the present embodiment. FIG. 16 is a cross section along a straightline passing through spacers 12. FIG. 17 is a cross section along astraight line passing through IC pad electrodes 24.

As illustrated in FIGS. 16 and 17, the deformation example 40 a is alead frame type semiconductor device. In the deformation example 40 a,the additional stack member 42 is a heat sink. Other portions in thedeformation example 40 a are substantially identical to thesemiconductor device 40 or the deformation example 2 a of the embodiment1.

In the embodiments described above, each spacer 12 is a stack of ballsformed on the tip portion of the bonding wire, as illustrated in FIG. 4.However, the spacer 12 is not limited thereto. For example, the spacer12 may be a metallic support.

Also, in the aforementioned embodiments, the adhesive layer and theadditional adhesive layer are formed of thermoplastic adhesive films.However, the adhesive layer and the additional adhesive layer are notlimited to the adhesive films. For example, the adhesive layer may be aresin paste coated on the rear face of the stack member. Similarly, theadditional adhesive layer may be a resin paste coated on the rear faceof the additional stack member.

All examples and conditional language provided herein are intended forthe pedagogical purposes of aiding the reader in understanding theinvention and the concepts contributed by the inventor to further theart, and are not to be construed as limitations to such specificallyrecited examples and conditions, nor does the organization of suchexamples in the specification relate to a showing of the superiority andinferiority of the invention. Although one or more embodiments of thepresent invention have been described in detail, it should be understoodthat the various changes, substitutions, and alterations could be madehereto without departing from the spirit and scope of the invention.

1. A semiconductor device comprising: a circuit substrate; a firstsemiconductor chip disposed on the circuit substrate; a plurality offirst spacers disposed on the first semiconductor chip; a secondsemiconductor chip which includes a first adhesive agent layer on alower face thereof and is disposed on upper portions of the plurality ofspacers; a wire which connects the circuit substrate to the firstsemiconductor chip; and a first sealing material which seals a gapbetween the first semiconductor chip and the first adhesive agent layer,wherein each height of the plurality of the first spacers is greaterthan height of the wire relative to an upper face of the firstsemiconductor chip.
 2. A semiconductor device comprising: a circuitsubstrate; a semiconductor chip disposed on the circuit substrate; aplurality of spacers disposed on the semiconductor chip; a heat sinkwhich includes an adhesive agent layer on a lower face thereof and isdisposed on upper portions of the plurality of spacers; a wire whichconnects the circuit substrate to the semiconductor chip; and a sealingmaterial which seals a gap between the semiconductor chip and theadhesive agent layer, wherein each height of the plurality of thespacers is greater than height of the wire relative to an upper face ofthe semiconductor chip.
 3. The semiconductor device according to claim1, wherein all of the plurality of first spacers have an identicalheight.
 4. The semiconductor device according to claim 3, wherein aportion of the wire is buried into the first adhesive agent layer. 5.The semiconductor device according to claim 1, further comprising: aplurality of second spacers disposed on the second semiconductor chip; athird semiconductor chip which includes a second adhesive agent layer ona lower face thereof and is disposed on upper portions of the pluralityof second spacers; and a second sealing material which seals at least agap between the second semiconductor chip and the second adhesive agentlayer.
 6. The semiconductor device according to claim 1, wherein each ofthe first spacers includes a first metallic ball directly adhered to anadhesive pad disposed on a surface of the first semiconductor chip and asecond metallic ball directly adhered to the first metallic ball.
 7. Thesemiconductor device according to claim 6, wherein the wire includes awire ball adhered to the surface of the first semiconductor chip; andthe first metallic ball and the second metallic ball included in thefirst spacer is larger than the wire ball.
 8. A semiconductor devicemanufacturing method comprising: mounting a second semiconductor chipincluding a first adhesive agent layer, which is thermoplastic anddisposed on a lower face thereof, on a spacer directly adhered to anupper face of a first semiconductor chip disposed on a circuitsubstrate; and adhering the second semiconductor chip to the spacer bypressing the second semiconductor chip mounted on the spacer onto thespacer while heating the first adhesive agent layer.
 9. A semiconductordevice manufacturing method comprising: mounting a heat sink includingan adhesive agent layer, which is thermoplastic and disposed on a lowerface thereof, on a spacer directly adhered to an upper face of asemiconductor chip disposed on a circuit substrate; and adhering theheat sink to the spacer by pressing the heat sink mounted on the spaceronto the spacer while heating the adhesive agent layer.
 10. Thesemiconductor device manufacturing method according to claim 8, furthercomprising: prior to the mounting, adhering one end of a bonding wire tothe upper face of the first semiconductor chip, wherein, in the adheringof the second semiconductor chip, burying a portion of the spacer and aportion of the bonding wire into the adhesive agent layer by pressingthe second semiconductor chip onto the first semiconductor chip whileheating the first adhesive agent layer.
 11. The semiconductor devicemanufacturing method according to claim 9, further comprising: prior tothe mounting, adhering one end of a bonding wire to the upper face ofthe first semiconductor chip, wherein, in the adhering of the heat sink,burying a portion of the spacer and a portion of the bonding wire intothe adhesive agent layer by pressing the heat sink onto thesemiconductor chip while heating the first adhesive agent layer.
 12. Thesemiconductor device manufacturing method according to claim 8, furthercomprising: prior to the mounting, adhering a first ball formed on a tipportion of a bonding wire directly to an adhesive pad disposed on asurface of the first semiconductor chip; and adhering a second ballformed on a tip portion of a bonding wire to the first ball directlyadhered to form the spacer.